Researchers Demonstrate Coherent Quantum Transport in MoS₂ Integrated into Field-Effect Transistor Arrays

Researchers have successfully demonstrated coherent quantum transport in monolayer semiconductors by integrating molybdenum disulfide (MoS₂) into field-effect transistor (FET) arrays. The study highlights advanced electronic properties of these materials, which may contribute to the development of more efficient semiconductor technologies. The research employed vicinal van der Waals epitaxy, a technique enabling the seamless transfer of single-crystalline MoS₂ onto FET arrays.

The use of vicinal van der Waals epitaxy allowed researchers to achieve precise alignment and integration of the monolayer material, ensuring high-quality crystalline structures within the transistors. This approach facilitated coherent quantum transport, a phenomenon where electrons move through the material without scattering, enhancing conductivity and performance. The findings suggest that monolayer semiconductors like MoS₂ could play a significant role in advancing next-generation electronic devices due to their unique properties and compatibility with existing semiconductor fabrication methods.

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Date: November 27, 2025

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